CONSIDERATIONS OF SEMICONDUCTOR ENERGY BAND THEORY ON COLLECTORLESS FLOTATION OF SULPHIDE MINERALS
           
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KeyWord:Collectorless flotation Energy band theory of semiconductor Frontier molecular orbital Self-induced flotation Na,S-induced flotation
Sun Shuiyu Li Bodan (Central South University of Technology)
Wang Dianzuo (Beijing General Research Institute of Nonferrous Metals)
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Abstract:
      The energy band structure diagrams of galena and pyrite semiconductors and the energy of HOMO and LUMO for oxygen molecule and HS- ion were obtained through quantum-mechanics calcluations. The energy level diagrams showing the interactions between the two mineral semiconductors and O2 and HS-were drawn and used to explain the micro-mechanisms of electron transfer involved in the collectorless flotation process of galena and pyrite, which includes self-induced flotation and lsa2S-indured flotation. The results have shown that the P-type semiconductor (pyrite as a typical one) displayed a good Na2S-induced flotation behavior, but the N-type one (galena as a typical one) a good self-induced flotation behavior. The electron carrier density (ne) to cavity carrier density (np) ratio was considered as a parameter of evaluating the collectorless flotation. The self-induced flotation becomes better with the increase of ne /np ratio, while the Na2S-induced flotation improves with the increase of np/we ratio.
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