|
| A STUDY ON MICROANALYSIS OF THE DOPING ELEMENT ARSENIC IN SIUCON MONOCRYSTALLINE BY SRXRF |
|
Revised:November 04, 1998
|
| View Full Text View/Add Comment Download reader |
| DOI： |
| KeyWord:SRXRF analysis Silicon monocrystalline Doping element Aresenic Micro-distribution analysis, |
|
| Beijing General Research Institute of Mining and Metallurgy |
| Hits: 2133 |
| Download times: 20 |
| Abstract: |
| Application of synchrotron radiation excited X-ray microfluorescence analysis(SRXRMF) in analysis of doping fort arsenic in silicon monocrystalline is studied. Theclear two-dimensional intensity distribution images of arsenic are obtained by using microprobe scanning apparatus and synchrotron radiation source. These analytical results are verified by usingthe measure method of four-point probe. The measured results show that the SRXRMF can be usedas an accurate microanalysis means for large area scanning of silicon monocrystalline semiconductormaterial. In this paper, the experimental results are discussed with the theory of crystal growth. |
| Close |