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| STUDY ON APPLICATION OF SEM AT LOW ACCELERATION VOLTAGE IN SPECIMEN ANALYSIS |
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Revised:January 05, 2002
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| DOI： |
| KeyWord:SEM,Acceleration voltage,Electron beam,Diffusion area,Line scanning,Mapping image,Special X ray, |
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| Abstract: |
| According to the principle of which a small diffusion area in a specimen is produced by an electron beam under low acceleration voltage, some experiments were done on all kinds of specimen. The experimental results show that the charging or/and discharging phenomenon of the specimen under 20kV acceleration voltage can be avoided while the analysis on the morphology of a poor-conductive specimen is carried out at 7.5kV acceleration voltage, improving the resolution and quality of images. The disturbance of X-ray to the elements out of the area to be analyzed under 20kV acceleration voltage can be surmounted when the qualitative analysis on the micron-level micro-particles is made, thus a correct conclusion being gotten easily. Owing to small diffusion area, the special X-xay images have clear phase boundary and good visual effect when line scanning and mapping images of elements are made in high magnification. |
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