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| REVIEW ON THE DEVELOPMENT AND RESEARCH OF SINGLE LAYER INTERGRANULAR SEMICONDUCTOR CERAMIC |
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Received:August 19, 2005
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| DOI： |
| KeyWord:Intergranular semiconductor; Ceramic substrate; Metallization; Review |
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| 1. Beijing General Research Institute of Mining and Metallurgy, Beijing 100044, China ; 2. Institute of Material Science and Engineering Central South University, Changsha 410083, Hunan ,China |
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| Abstract: |
| Having been brought into a new period of comprehensive development, slice electronic elements are increasingly subject to the need of realization of micromation, weight lightening, integration, high frequency and high performance. The novel single layer intergranular semiconductor ceramic is right the time to be developed for this purpose. The present paper overviewed on the research, production and development of this kind of novel ceramic, especially the process of manufacture and metallization. Moreover, the paper forecasted the application and development prospect of the novel single layer intergranular semiconductor ceramic. |
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