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| Study on the Recombination Activity of Σ3 Grain Boundary in High-Efficiency Polysilicon |
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Received:March 20, 2018
Revised:March 01, 2019
Accepted:April 03, 2018
Published Online:May 13, 2019
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| DOI： |
| KeyWord:high efficiency polysilicon; Grain boundary; Recombination activity |
| Author | Institution |
| Shenhongyuan |
Key Laboratory of non-ferrous metal vacuum metallurgy, Yunnan Province, Kunming University of Science and Technology/ University of silicon metallurgy and Silicon Materials Engineering Research Center,Yunnan Province |
| Lvtianlong |
Key Laboratory of non-ferrous metal vacuum metallurgy, Yunnan Province, Kunming University of Science and Technology/ University of silicon metallurgy and Silicon Materials Engineering Research Center,Yunnan Province |
| Weikuixian |
Key Laboratory of non-ferrous metal vacuum metallurgy, Yunnan Province, Kunming University of Science and Technology/ University of silicon metallurgy and Silicon Materials Engineering Research Center,Yunnan Province |
| Mawenhui |
Key Laboratory of non-ferrous metal vacuum metallurgy, Yunnan Province, Kunming University of Science and Technology/ University of silicon metallurgy and Silicon Materials Engineering Research Center,Yunnan Province |
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| Abstract: |
| Polysilicon(poly-Si) as a basic photovoltaic material has attracted many researchers" attention in recent years. There are many defects such as dislocation and grain boundary(GB) in polysilicon, which is unfavorable to the conversion efficiency of poly-Si solar cells. Many studies have shown that not all GBs in poly-Si is deep recombination centers, hindering the diffusion of minority carriers. In this study, electron beam induced current (EBIC) and electron back scattering diffraction (EBSD) was used for the special GBs(CSL GBs) in commercial production of high efficiency polysilicon, and the recombination of CSL GBs was researched. The results showed that the Σ3(1-11)GB at twin grain has almost no recombination activity, and EBIC contrast is 1.32% with the temperature of 300K. While Σ3(1-1-1)GB at normal grain showed the recombination activity, the EBIC contrast is 39.62% with the temperature of 300K. And with the decrease of temperature, there is a slow decline, indicating that a deep-level recombination center has formed at the grain boundary of Σ3(1-1-1). |
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